- Product Model IMYH200R075M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC DISCRETE
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1774
- 1 33.85
- 10 30.08
- 240 24.55
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Rds On (Max) @ Id, Vgs 98mOhm @ 13A, 18V
- Power Dissipation (Max) 267W (Tc)
- Vgs(th) (Max) @ Id 5.5V @ 7.7mA
- Supplier Device Package PG-TO247-4-U04
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +20V, -7V
- Drain to Source Voltage (Vdss) 2000 V
- Gate Charge (Qg) (Max) @ Vgs 64 nC @ 18 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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