- Product Model 2SK3565(Q,M)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 900V 5A TO220SIS
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1500
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Ta)
- Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 900 V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V