- Product Model IPF042N10NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1781
Pricing:
- 800 1.35
- 1600 1.15
- 2400 1.09
- 5600 1.05
Technical Details
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 139A (Tc)
- Rds On (Max) @ Id, Vgs 4.25mOhm @ 80A, 10V
- Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 93µA
- Supplier Device Package PG-TO263-7
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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