Technical Details

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 270mA (Ta)
• Rds On (Max) @ Id, Vgs 6Ohm @ 500mA, 10V
• Power Dissipation (Max) 800mW (Ta)
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package TO-226AA (TO-92)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 3 nC @ 15 V