- Product Model SI5855DC-T1-E3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET P-CH 20V 2.7A 1206-8
- Classification Single FETs, MOSFETs
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Inventory:1500
Technical Details
- Package / Case 8-SMD, Flat Lead
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
- Rds On (Max) @ Id, Vgs 110mOhm @ 2.7A, 4.5V
- FET Feature Schottky Diode (Isolated)
- Power Dissipation (Max) 1.1W (Ta)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package 1206-8 ChipFET™
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V