Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
• Rds On (Max) @ Id, Vgs 210mOhm @ 2A, 4.5V
• FET Feature Schottky Diode (Isolated)
• Power Dissipation (Max) 1.75W (Ta), 2.75W (Tc)
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package 8-SOIC
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 312 pF @ 10 V