Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
• Rds On (Max) @ Id, Vgs 55mOhm @ 2A, 10V
• FET Feature Schottky Diode (Isolated)
• Power Dissipation (Max) 2W (Tc)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 8-SOIC
• Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V