Technical Details

• Package / Case Y3-DCB
• Mounting Type Chassis Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 590A (Tc)
• Rds On (Max) @ Id, Vgs 2.1mOhm @ 500mA, 10V
• Power Dissipation (Max) 2200W (Tc)
• Vgs(th) (Max) @ Id 6V @ 110mA
• Supplier Device Package Y3-DCB
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 2000 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 50000 pF @ 25 V