- Product Model G50N03J
- Brand Goford Semiconductor
- RoHS Yes
- Description N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 5059
- 1 0.6
Technical Details
- Package / Case TO-251-3 Stub Leads, IPAK
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
- Power Dissipation (Max) 48W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-251
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 16.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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