Technical Details

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 180A (Tc)
• Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package TO-3P
• Drain to Source Voltage (Vdss) 55 V
• Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V