Technical Details

• Package / Case i4-Pac™-5
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 38A (Tc)
• Rds On (Max) @ Id, Vgs 70mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id 3.9V @ 2.7mA
• Supplier Device Package ISOPLUS i4-PAC™
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V