• In Stock 2324
Pricing:
  • 1 14.76
  • 25 11.95
  • 100 11.25
  • 500 10.19
  • 1000 9.35

Technical Details

  • Package / Case TO-247-2
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 3227pF @ 0V, 1MHz
  • Current - Average Rectified (Io) 128A
  • Supplier Device Package TO-247AC
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 1200 V
  • Voltage - Forward (Vf) (Max) @ If 1.8 V @ 40 A
  • Current - Reverse Leakage @ Vr 30 µA @ 1200 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


GEN 3 650V 25 M SIC MOSFET

In Stock: 2242

  • 1: 31.08
  • 30: 25.77
  • 120: 24.15

DIODE SIL CARB 1.2KV 77A TO247-2

In Stock: 2686

  • 1: 20.08
  • 30: 16.65
  • 120: 15.61
  • 510: 13.32

DIODE SIL CARB 650V 82A TO247-2

In Stock: 2856

  • 1: 10.33

DIODE SIL CARB 1.7KV 122A TO247

In Stock: 1645

  • 1: 46.08

SENSOR CURRENT HALL 100A AC/DC

In Stock: 3054

  • 1: 22.1
  • 10: 18.42
  • 25: 16.31
  • 300: 15.26
  • 600: 14.73

DIODE SIL CARB 1.7KV 135A TO247

In Stock: 1839

  • 1: 75.27

DIODE SIC 1.2KV 109A TO247-3

In Stock: 1676

  • 1: 32.81

DIODE SIL CARB 650V 112A TO247AD

In Stock: 1500

  • 1: 11.39
  • 25: 9.22
  • 100: 8.68
  • 500: 7.86
  • 1000: 7.21

DIODE GEN PURP 400V 1A SOD123F

In Stock: 464738

  • 3000: 0.11
  • 6000: 0.11
  • 9000: 0.1
  • 30000: 0.09
  • 75000: 0.09

DIODE GEN PURP 1.2KV 90A TO247AD

In Stock: 3976

  • 1: 5.35
  • 25: 4.24
  • 100: 3.64
  • 500: 3.23
  • 1000: 2.77
  • 2000: 2.61
Top