- Product Model PJD18N20_L2_00001
- Brand PANJIT
- RoHS Yes
- Description 200V N-CHANNEL ENHANCEMENT MODE
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 10189
- 3000 0.35
- 6000 0.33
- 9000 0.31
- 30000 0.3
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1017 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
N 200V, RD(MAX)<0.16@10V,VTH1.0V
In Stock: 3485
- 2500: 0.38
- 5000: 0.36
- 12500: 0.34
- 25000: 0.34
MOSFET N-CH 200V 18A TO-252
In Stock: 21500
- 1: 0.36
DIODE SCHOTTKY 20V 1A PWRDI123
In Stock: 55490
- 3000: 0.16
MOSFET N-CH 200V 9A DPAK
In Stock: 4018
- 2500: 0.33
- 5000: 0.31
- 12500: 0.29
- 25000: 0.29
MOSFET N-CH 200V 24A DPAK
In Stock: 17646
- 3000: 0.75
- 6000: 0.72
- 9000: 0.7
MOSFET N-CH 200V 36A TO252AA
In Stock: 1500
- 1: 4.5
- 70: 3.57
- 140: 3.06
- 560: 2.72
- 1050: 2.33
- 2030: 2.19
N-CHANNEL MOSFET,SOT-223
In Stock: 13269
- 2500: 0.15
- 5000: 0.14
- 12500: 0.13
- 25000: 0.13
- 62500: 0.12
MOSFET N-CH 250V 14A DPAK
In Stock: 5466
- 2500: 0.84
- 5000: 0.81
- 12500: 0.78
