- Product Model GPI65010DF56
- Brand GaNPower
- RoHS No
- Description GANFET N-CH 650V 10A DFN 5X6
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1783
Pricing:
- 1 5
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A
- Vgs(th) (Max) @ Id 1.4V @ 3.5mA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7.5V, -12V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Vendor Undefined
- REACH Status Vendor Undefined
- RoHS Status Not applicable
Related Products
GANFET N-CH 200V 5A DIE OUTLINE
In Stock: 17379
- 2500: 1.32
- 5000: 1.27
GANFET N-CH 100V 1.7A DIE
In Stock: 29763
- 2500: 0.57
- 5000: 0.54
- 12500: 0.51
650 V, 190 MOHM GALLIUM NITRIDE
In Stock: 3471
- 2500: 1.39
- 5000: 1.34
GANFET N-CH 650V 5A DFN 5X6
In Stock: 1667
- 1: 2.5
GANFET N-CH 650V 8A DFN5X6
In Stock: 1600
- 1: 4
GaNFET N-CH 900V 10A DFN8x8
In Stock: 4480
- 1: 6.25
