- Product Model SCT2280KEHRC11
- Brand ROHM Semiconductor
- RoHS Yes
- Description 1200V, 14A, THD, SILICON-CARBIDE
- Categories Single FETs, MOSFETs
- In Stock 1950
- 1 10.15
- 30 8.51
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 14A (Tc)
- Rds On (Max) @ Id, Vgs 364mOhm @ 4A, 18V
- Power Dissipation (Max) 108W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1.4mA
- Supplier Device Package TO-247N
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -6V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 36 nC @ 400 V
- Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 800 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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