- Product Model W63AH6NBVABI
- Brand Winbond Electronics Corporation
- RoHS Yes
- Description IC DRAM 1GBIT HSUL 12 178VFBGA
- Categories Memory
-
PDF
- In Stock 1500
- 1 5.63
- 10 5.14
- 25 5.04
- 40 5.01
- 189 4.49
- 378 4.47
- 567 4.19
- 945 4.02
Technical Details
- Package / Case 178-VFBGA
- Mounting Type Surface Mount
- Memory Size 1Gbit
- Memory Type Volatile
- Operating Temperature -40°C ~ 85°C (TC)
- Voltage - Supply 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Technology SDRAM - Mobile LPDDR3
- Clock Frequency 800 MHz
- Memory Format DRAM
- Supplier Device Package 178-VFBGA (11x11.5)
- Write Cycle Time - Word, Page 15ns
- Memory Interface HSUL_12
- Access Time 5.5 ns
- Memory Organization 64M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0032
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
IC FLASH 128MBIT SPI/QUAD 8WSON
In Stock: 16750
- 1: 2.36
- 10: 2.12
- 25: 2.09
- 40: 2.08
- 80: 1.86
- 230: 1.8
- 570: 1.79
- 1140: 1.67
- 5130: 1.51
IC DRAM 1GBIT HSUL 12 178VFBGA
In Stock: 1500
- 189: 4.26
IC DRAM 1GBIT HSUL 12 178VFBGA
In Stock: 1500
- 2000: 3.93
IC DRAM 1GBIT HSUL 12 178VFBGA
In Stock: 1500
- 189: 4.28
IC DRAM 1GBIT HSUL 12 178VFBGA
In Stock: 1500
- 189: 4.52
IC DRAM 1GBIT HSUL 12 178VFBGA
In Stock: 1500
- 2000: 3.74
IC DRAM 1GBIT HSUL 12 178VFBGA
In Stock: 1619
- 1: 5.69
- 10: 5.2
- 25: 5.1
- 40: 5.06
- 189: 4.54
- 378: 4.52
- 567: 4.24
- 945: 4.06
