Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 2.34A (Ta)
• Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V
• FET Feature Schottky Diode (Isolated)
• Power Dissipation (Max) 730mW (Ta)
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 8-SOIC
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 16 V