Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
• Rds On (Max) @ Id, Vgs 90mOhm @ 2.4A, 4.5V
• FET Feature Schottky Diode (Isolated)
• Supplier Device Package 8-SOIC
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 16 V