- Product Model NTH4L015N065SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE MOSFET, NCHANNEL
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1633
- 1 27.17
- 30 22.53
- 120 21.12
- 510 18.02
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 142A (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 75A, 18V
- Power Dissipation (Max) 500W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 25mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 283 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 4790 pF @ 325 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
SIC DISCRETE
In Stock: 1547
- 1: 77.19
- 30: 67.54
- 120: 62.71
MOSFET 650V NCH SIC TRENCH
In Stock: 1960
- 1: 20.9
- 30: 16.92
- 120: 15.92
- 510: 14.43
MOSFET N-CH 600V 109A TO247-4
In Stock: 1708
- 1: 22.25
- 30: 18.45
- 120: 17.29
- 510: 14.76
SILICON CARBIDE MOSFET, NCHANNEL
In Stock: 1950
- 1: 27.28
- 30: 22.61
- 120: 21.2
- 510: 18.09
SILICON CARBIDE (SIC) MOSFET - 1
In Stock: 1769
- 1: 20.08
- 10: 17.69
- 450: 13.86
SILICON CARBIDE (SIC) MOSFET - 1
In Stock: 1842
- 1: 27.35
- 30: 22.68
- 120: 21.26
- 510: 18.14
SIC MOS TO247-4L 750V
In Stock: 1742
- 1: 37.62
- 30: 31.52
- 120: 29.42
MOSFET N-CH 650V 120A TO247-4
In Stock: 3194
- 1: 74.4
- 30: 65.1
- 120: 60.45
