- Product Model SCTL90N65G2V
- Brand STMicroelectronics
- RoHS Yes
- Description SILICON CARBIDE POWER MOSFET 650
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 4240
- 3000 22.54
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Rds On (Max) @ Id, Vgs 24mOhm @ 40A, 18V
- Power Dissipation (Max) 935W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Supplier Device Package PowerFlat™ (8x8) HV
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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