• In Stock 1789
Pricing:
  • 1 27.02
  • 30 22.4
  • 120 21
  • 510 17.92

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 66A (Tc)
  • Rds On (Max) @ Id, Vgs 53.5mOhm @ 33.3A, 15V
  • Power Dissipation (Max) 326W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 9.5mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +15V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 101 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 1000 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

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