- Product Model EGF1THE3_A/H
- Brand Vishay General Semiconductor – Diodes Division
- RoHS Yes
- Description DIODE GEN PURP 1.3KV 1A DO214BA
- Categories Single Diodes
-
PDF
- In Stock 2540
- 1500 0.34
- 3000 0.3
- 7500 0.29
- 10500 0.27
- 37500 0.26
Technical Details
- Package / Case DO-214BA
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 75 ns
- Technology Standard
- Capacitance @ Vr, F 8pF @ 4V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package DO-214BA (GF1)
- Operating Temperature - Junction -55°C ~ 150°C
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 1300 V
- Voltage - Forward (Vf) (Max) @ If 3 V @ 1 A
- Current - Reverse Leakage @ Vr 5 µA @ 1300 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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