- Product Model PHE13009/DG,127
- Brand NXP Semiconductors
- RoHS No
- Description NOW WEEN - PHE13009 - POWER BIPO
- Categories Single Bipolar Transistors
-
PDF
- In Stock 5180
Pricing:
- 1 0.33
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Transistor Type NPN
- Operating Temperature 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic 2V @ 1.6A, 8A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V
- Supplier Device Package TO-220AB
- Current - Collector (Ic) (Max) 12 A
- Voltage - Collector Emitter Breakdown (Max) 400 V
- Power - Max 80 W
- ECCN EAR99
- HTSUS 8541.29.0095
