- Product Model IPW65R029CFD7XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 69A TO247-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1694
- 1 13.35
- 30 10.81
- 120 10.17
- 510 9.22
- 1020 8.46
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 69A (Tc)
- Rds On (Max) @ Id, Vgs 29mOhm @ 35.8A, 10V
- Power Dissipation (Max) 305W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 1.79mA
- Supplier Device Package PG-TO247-3
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7149 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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