- Product Model WNSC10650T6J
- Brand WeEn Semiconductors Co., Ltd
- RoHS No
- Description DIODE SIL CARBIDE 650V 10A 5DFN
- Categories Single Diodes
-
PDF
- In Stock 1500
Technical Details
- Package / Case 4-VSFN Exposed Pad
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 328pF @ 1V, 1MHz
- Current - Average Rectified (Io) 10A
- Supplier Device Package 5-DFN (8x8)
- Operating Temperature - Junction 175°C (Max)
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
- Current - Reverse Leakage @ Vr 60 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
