- Product Model PH5525L,115
- Brand NXP Semiconductors
- RoHS Yes
- Description MOSFET N-CH 25V 81.7A LFPAK56
- Classification Single FETs, MOSFETs
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Inventory:1500
Technical Details
- Package / Case SC-100, SOT-669
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 81.7A (Tc)
- Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V
- Power Dissipation (Max) 62.5W (Tc)
- Vgs(th) (Max) @ Id 2.15V @ 1mA
- Supplier Device Package LFPAK56, Power-SO8
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 25 V
- Gate Charge (Qg) (Max) @ Vgs 16.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 12 V