Technical Details

• Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
• Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
• Power Dissipation (Max) 83W (Tc)
• Vgs(th) (Max) @ Id 3.9V @ 350µA
• Supplier Device Package PG-TO262-3-1
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 560 V
• Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V