• In Stock 5450
Pricing:
  • 1 11.64
  • 50 9.76

Technical Details

  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Mounting Type Surface Mount
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 36A (Tc)
  • Rds On (Max) @ Id, Vgs 79mOhm @ 13.2A, 15V
  • Power Dissipation (Max) 136W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 5mA
  • Supplier Device Package TO-263-7
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +15V, -4V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 46 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 600 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 3 (168 Hours)
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

Related Products


SICFET N-CH 650V 120A TO247-3

In Stock: 2412

  • 1: 35.79
  • 30: 35.2

SICFET N-CH 650V 120A TO247-4L

In Stock: 2379

  • 1: 50.91
  • 30: 42.66
  • 120: 39.82

SICFET N-CH 900V 73A TO247-4

In Stock: 3690

  • 1: 47.73
  • 30: 40
  • 120: 37.33

650V 45 M SIC MOSFET

In Stock: 1975

  • 1: 19.68
  • 50: 15.93
  • 100: 15
  • 500: 13.59

SICFET N-CH 650V 37A TO247-3

In Stock: 2243

  • 1: 11.64
  • 30: 9.76

SIC, MOSFET, 60M, 650V, TO-263-7

In Stock: 2130

  • 800: 11.44

SIC, MOSFET, 60M, 650V, TOLL, IN

In Stock: 3974

  • 2000: 8.15

MOSFET P-CH 30V 50A PPAK SO-8

In Stock: 54151

  • 3000: 0.33
  • 6000: 0.31
  • 9000: 0.29
  • 30000: 0.29

SICFET N-CH 650V 27A D2PAK-7

In Stock: 4454

  • 800: 5.58
  • 1600: 5.02
Top