- Product Model MSC180SMA120S
- Brand Roving Networks (Microchip Technology)
- RoHS No
- Description MOSFET SIC 1200 V 180 MOHM TO-26
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1681
- 1 9.62
Technical Details
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Rds On (Max) @ Id, Vgs 225mOhm @ 8A, 20V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 3.26V @ 500µA
- Supplier Device Package D3PAK
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +23V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
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