• In Stock 1587
Pricing:
  • 1 24.95

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 66A (Tc)
  • Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
  • Power Dissipation (Max) 323W (Tc)
  • Vgs(th) (Max) @ Id 2.6V @ 2mA
  • Supplier Device Package TO-247-4
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +23V, -10V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected

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