- Product Model NTH4L080N120SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SICFET N-CH 1200V 29A TO247-4
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1927
- 1 11.5
- 30 9.18
- 120 8.21
- 510 7.25
- 1020 6.52
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
- Power Dissipation (Max) 170W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 5mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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