- Product Model H5N2305P-E
- Brand Intersil (Renesas Electronics Corporation)
- RoHS Yes
- Description POWER FIELD-EFFECT TRANSISTOR
- Categories Single FETs, MOSFETs
-
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- In Stock 1810
Pricing:
- 1 7.28
Technical Details
- Package / Case TO-3PFM, SC-93-3
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Ta)
- Rds On (Max) @ Id, Vgs 700mOhm @ 6A, 10V
- Power Dissipation (Max) 60W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-3PFM
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 230 V
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
