Technical Details

• Package / Case TO-237AA
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1V @ 2mA, 20mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 10V
• Frequency - Transition 200MHz
• Supplier Device Package TO-237
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 300 V
• Power - Max 850 mW
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant