- Product Model IPW60R024P7XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 101A TO247-3-41
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
- 1 12.75
- 30 10.32
- 120 9.71
- 510 8.8
- 1020 8.07
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 101A (Tc)
- Rds On (Max) @ Id, Vgs 24mOhm @ 42.4A, 10V
- Power Dissipation (Max) 291W (Tc)
- Vgs(th) (Max) @ Id 4V @ 2.03mA
- Supplier Device Package PG-TO247-3-41
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 164 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7144 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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