- Product Model AIDK08S65C5ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description DISCRETE DIODES
- Categories Single Diodes
-
PDF
- In Stock 1688
- 1000 2.72
- 2000 2.56
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 248pF @ 1V, 1MHz
- Current - Average Rectified (Io) 8A
- Supplier Device Package PG-TO263-2
- Operating Temperature - Junction -40°C ~ 175°C
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
- Current - Reverse Leakage @ Vr 50 µA @ 650 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
DISCRETE DIODES
In Stock: 1500
- 1000: 2.46
- 2000: 2.32
DISCRETE DIODES
In Stock: 2480
- 1000: 2.68
IC MCU 32BIT 128KB FLASH 64TQFP
In Stock: 2400
- 1: 4.59
- 10: 4.12
- 25: 3.9
- 80: 3.38
- 230: 3.2
- 900: 3.05
IC MCU 32BIT 128KB FLASH 64TQFP
In Stock: 1810
- 1: 5.59
- 10: 5.02
- 25: 4.75
- 160: 4.12
- 320: 3.91
- 480: 3.5
- 960: 2.96
- 2400: 2.81
MOSFET_(75V 120V( PG-HSOF-5
In Stock: 4470
- 2000: 1.74
- 6000: 1.66
MOSFET N-CH 80V 240A 8HSOF
In Stock: 2595
- 2000: 1.84
SICFET N-CH 1.2KV 13A TO247-3
In Stock: 2766
- 1: 7.83
- 30: 6.25
- 120: 5.59
- 510: 4.93
- 1020: 4.44
- 2010: 4.16
DIODE SIL CARB 650V 8A TO220AC
In Stock: 6494
- 1: 4.68
- 10: 3.93
- 100: 3.18
- 500: 2.83
- 1000: 2.42
- 2000: 2.28
