• In Stock 2328
Pricing:
  • 1 51.96
  • 30 43.54
  • 120 40.64

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 55A (Tc)
  • Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V
  • Power Dissipation (Max) 262W
  • Vgs(th) (Max) @ Id 5.6V @ 10mA
  • Supplier Device Package TO-247-4L
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 107 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1337 pF @ 800 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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