- Product Model IPB110P06LMATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET P-CH 60V 100A TO263-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3057
- 1000 2.58
- 2000 2.43
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V
- Power Dissipation (Max) 300W (Tc)
- Vgs(th) (Max) @ Id 2V @ 5.55mA
- Supplier Device Package PG-TO263-3-2
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 281 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 8500 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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