Silicon carbide (SiC) and gallium nitride (GaN), who is the future of wide bandgap (WBG) materials?
So far, semiconductor materials have gone through three stages of development: silicon (Si) is the first-generation semiconductor, arsenide (GaAs) is the second-generation semiconductor, and wide band gap semiconductor is the third-generation semiconductor (WBG). Silicon carbide (SiC) and gallium nitride (GaN) are two types of semiconductors (GaN). Although there is no saying in this field that "the last wave beats the front wave, the front wave dies on the beach," the third generation semiconductors represented by GaN and SiC are in the early stages of development, and first and second generation semiconductor materials such as Si and GaAs are still available. In the industry, there is a large-scale application. Third-generation semiconductors, on the other hand, have significant performance advantages.
